o0213 tkim tc-00003040 no.a2219-1/7 semiconductor components industries, llc, 2013 october, 2013 http://onsemi.com NGTG12N60TF1G features ? v ce (sat)=1.4v typ. (i c =12a, v ge =15v) ? low switching loss in higher frequency applications ? enhansment type ? 5 s short circuit capability ? adoption of full isolation type package applications ? power factor correction of white goods appliance ? general purpose inverter specifications absolute maximum ratings at ta = 25 c, unless otherwise specified parameter symbol conditions ratings unit collector to emitter voltage v ces 600 v gate to emitter voltage v ges 20 v collector current (dc) i c * 1 limited by tjmax @ tc=25 c * 2 24 a @ tc=100 c * 2 12 a collector current (pulse) i cp pulse width limited by tjmax(ref:aso graph) 88 a allowable power dissipation p d tc=25 c (our ideal heat dissipation condition) * 2 54 w junction temperature tj 150 c storage temperature tstg - 55 to +150 c note : * 1 collector current is calculated from the following formula. * 2 our condition is radiation from backside. the method is applying silicone grease to the backside of the de vice and attaching the device to wa ter-cooled radiator made of aluminium. electrical characteristics at ta = 25 c, unless otherwise specified parameter symbol conditions ratings unit min typ max collector to emitter breakdown voltage v( br ) ces i c =500 a, v ge =0v 600 v collector to emitter cut off current i ces v ce =600v, v ge =0v tc=25 c 10 a tc=125 c 1 ma gate to emitter leakage current i ges v ge = 20v, v ce =0v 100 na gate to emitter threshold voltage v ge (th) v ce =20v, i c =250 a 4.5 6.5 v collector to emitter saturation voltage v ce ( sat ) v ge =15v, i c =12a tc=25 c 1.4 1.6 v tc=125 c 1.6 v input capacitance cies v ce =20v,f=1mhz 2000 pf output capacitance coes 60 pf reverse transfer capacitance cres 50 pf continued on next page. n-channel igbt 600v, 12a, v ce (sat);1.4v to-3pf-3l stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended oper ating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty. orderin g numbe r : ena2219 tjmax - tc i c (tc)= r th (j-c) v ce (sat)max.(tjmax, i c (tc)) ordering information see detailed orderin g and shi pp in g information on p a g e 7 of this data shee t . to-3pf-3l
NGTG12N60TF1G no.a2219-2/7 continued from preceding page. parameter symbol conditions ratings unit min typ max turn-on delay time t d (on) v cc =300v,i c =15a r g =30 ,l=200 h v ge =0v/15v vclamp=400v see fig.1, see fig.2 55 ns rise time t r 30 ns turn-on time ton 330 ns turn-off delay time t d (off) 200 ns fall time t f 110 ns turn-off time toff 350 ns total gate charge qg v ce =300v, v ge =15v, i c =15a 84 nc gate to emitter charge qge 16 nc gate to collector ?miller? charge qgc 37 nc thermal characteristics at ta = 25 c, unless otherwise specified parameter symbol conditions ratings unit thermal resistance (junction- case) rth(j-c) tc=25 c (our ideal heat dissipation condition)*2 2.33 c /w thermal resistance (junction- atmosphere) rth(j-a) 47.5 c /w
NGTG12N60TF1G no.a2219-3/7
NGTG12N60TF1G no.a2219-4/7
NGTG12N60TF1G no.a2219-5/7
NGTG12N60TF1G no.a2219-6/7 package dimensions NGTG12N60TF1G to-3pf-3l case 340ah issue o unit : mm 1: gate 2: collector 3: emitter electrical connection 2 1 3
NGTG12N60TF1G ps no.a2219-7/7 ordering & package information marking device package shipping note NGTG12N60TF1G to-3pf-3l sc-94 30 pcs. / tube pb-free fig.1 switching time test circuit fig.2 timing chart on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc mak es no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability ar ising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequentia l or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s techn ical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorize d for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other appli cation in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of persona l injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture o fthe part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner. gtg12n 60 lot no. r g v cc NGTG12N60TF1G dut c lam p d i 200mh 90% 0 90% 0 10% 10% v ge v ce i c 10% 10% 90% 10% t off t d (off) t f t r t d (on) t on it16383
|
